, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn rf transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MMBR911L description ? high gain gnf = 17 db typ. @ lc= 10 ma, f = 500 mhz ? low noise figure nf= 1.7db typ. @ f= 500 mhz ? high current-gain bandwidth product ft = 6.0 ghz typ. @ lc= 30 ma applications ? designed for low noise, wide dynamic range front-end amplifiers and low-noise vco's. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @tc= 75'c junction temperature storage temperature range value 20 12 2 60 0.333 150 -55-150 unit v v v ma w ?c c sot-23 package dim _4 b c d j- il- h k l m mm win 0.37 1.19 2. 10 0. 89 1. 75 2.65 1, 10 0. 15 0.076 max 0.51 1. 10 2. 50 1.05 2.05 3.05 1.30 0.61 0. 178 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn rf transistor MMBR911L electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo icbo mfe cob ft gnf gnf nf nf parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cutoff current dc current gain output capacitance current-gain ? bandwidth product gain? noise figure gain@ noise figure noise figure noise figure conditions lc= 1 ma ; !b= 0 lc= 0.1ma; ie= 0 le=0.1ma;lc=0 vcb=15v; ie=0 lc= 30ma ;vce= 10v |e=0;vcb=10v;f=1mhz ig= 30ma ; vce= 10v; f= 1 ghz lc= 10ma ; vce= 10v; f= o.sghz lc= 10ma ; vce= 10v; f= 1ghz lc= 10ma ; vce= 10v; f= o.sghz lc= 10ma ; vce= 10v; f= 1ghz min 12 20 2 30 typ. 6.0 17 11 2.0 2.9 max 0.05 200 1.0 unit v v v ua pf ghz db db db db w 1c i ' i current gain-bandwidth versus collector current @ 1.0 ghz vce = 10 v ' = 1 ghz ? i i 2.5 r 1.5 0.5 io ;c ac i", collector current (rrf.) 1 ? input capacitance versus base-emitter voltage f=1mhz vfle, base-emitter voltage ivoe;
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